- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
HXY MOSFET HC1M320120D
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | HC1M320120D |
| LCSC Part # | C41428808 |
| Packaging | TO-247-4L |
| Customer # | |
| Key Attributes | SICFET N-CH 1.2kV 7.6A TO-247-4L |
| Datasheet |  HXY MOSFET HC1M320120D |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 24pF | |
| Current - Continuous Drain(Id) | 7.6A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| RDS(on) | 450mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 324pF | |
| Gate Charge(Qg) | 23.5nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated Kelvin source pin
- High blocking voltage and low on-resistance
- Low capacitance for high-speed switching
- Fast intrinsic diode with low reverse recovery charge
- Halogen-free, RoHS compliant
Applications
AI Translation
- Renewable energy
- Electric vehicle battery chargers
- High-voltage DC/DC converters
- Switched-mode power supplies
In-Stock: 13
13 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.4117 | $ 5.41 |
| 10+ | $ 4.6438 | $ 46.44 |
| 30+ | $ 4.1867 | $ 125.60 |
| 90+ | $ 3.725 | $ 335.25 |
| 510+ | $ 3.5123 | $ 1791.27 |
| 990+ | $ 3.4157 | $ 3381.54 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247-4L | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 24pF | |
| Current - Continuous Drain(Id) | 7.6A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| RDS(on) | 450mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 324pF | |
| Gate Charge(Qg) | 23.5nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated Kelvin source pin
- High blocking voltage and low on-resistance
- Low capacitance for high-speed switching
- Fast intrinsic diode with low reverse recovery charge
- Halogen-free, RoHS compliant
Applications
AI Translation
- Renewable energy
- Electric vehicle battery chargers
- High-voltage DC/DC converters
- Switched-mode power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |