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HXY MOSFET HC1M30065D
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | HC1M30065D |
| LCSC Part # | C41428805 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | SICFET N-CH 650V 90A TO-247 |
| Datasheet |  HXY MOSFET HC1M30065D |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 90A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 428W | |
| RDS(on) | 40mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.079nF | |
| Gate Charge(Qg) | 98nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated driver source pin
- High blocking voltage and low on-resistance
- Low capacitance for high-speed switching
- Fast intrinsic diode with low reverse recovery charge Qrr
- Halogen-free, RoHS compliant
Applications
AI Translation
- Renewable energy
- Electric vehicle battery chargers
- High-voltage DC/DC converters
- Switched-mode power supplies
In-Stock: 21
21 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.2252 | $ 12.23 |
| 10+ | $ 10.5035 | $ 105.04 |
| 30+ | $ 9.4562 | $ 283.69 |
| 90+ | $ 8.5759 | $ 771.83 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 90A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 428W | |
| RDS(on) | 40mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.079nF | |
| Gate Charge(Qg) | 98nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated driver source pin
- High blocking voltage and low on-resistance
- Low capacitance for high-speed switching
- Fast intrinsic diode with low reverse recovery charge Qrr
- Halogen-free, RoHS compliant
Applications
AI Translation
- Renewable energy
- Electric vehicle battery chargers
- High-voltage DC/DC converters
- Switched-mode power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |