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EDA ModelsEasyEDA
HXY MOSFET HC1M40120J
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | HC1M40120J |
| LCSC Part # | C41428801 |
| Packaging | TO-263-7L |
| Customer # | |
| Key Attributes | SICFET N-CH 1.2kV 65A TO-263-7L |
| Datasheet |  HXY MOSFET HC1M40120J |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 65A | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 40mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.766nF | |
| Gate Charge(Qg) | 112nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 65A | |
| Operating Temperature - | -40℃~+175℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 40mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.766nF | |
| Gate Charge(Qg) | 112nC | |
| Type | N-Channel |
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In-Stock: 58
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 11.4214 | $ 11.42 |
| 10+ | $ 10.8813 | $ 108.81 |
| 50+ | $ 9.9473 | $ 497.37 |
| 100+ | $ 9.13 | $ 913.00 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 65A | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 40mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.766nF | |
| Gate Charge(Qg) | 112nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 65A | |
| Operating Temperature - | -40℃~+175℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 40mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.766nF | |
| Gate Charge(Qg) | 112nC | |
| Type | N-Channel |
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C41428801 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |