HXY MOSFET HC1D02065E
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | HC1D02065E |
| LCSC Part # | C41428787 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | DIODE SIC 650V 7.5A TO-252-2L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 10uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 18A | |
| Current - Rectified | 7.5A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This product series delivers advanced performance, designed specifically for high-frequency applications requiring high efficiency and reliability.
Features
AI Translation
- Low conduction loss due to low VF
- Extremely low switching loss due to small QC
- High robustness due to improved surge current capability
- Industry-standard quality and reliability
Applications
AI Translation
- Uninterruptible power supplies
- Power inverters
- High-performance switch-mode power supplies
- Power factor correction
In-Stock: 148
148 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7077 | $ 0.71 |
| 10+ | $ 0.5696 | $ 5.70 |
| 30+ | $ 0.5014 | $ 15.04 |
| 100+ | $ 0.4332 | $ 43.32 |
| 500+ | $ 0.3919 | $ 195.95 |
| 1,000+ | $ 0.3713 | $ 371.30 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 10uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 18A | |
| Current - Rectified | 7.5A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This product series delivers advanced performance, designed specifically for high-frequency applications requiring high efficiency and reliability.
Features
AI Translation
- Low conduction loss due to low VF
- Extremely low switching loss due to small QC
- High robustness due to improved surge current capability
- Industry-standard quality and reliability
Applications
AI Translation
- Uninterruptible power supplies
- Power inverters
- High-performance switch-mode power supplies
- Power factor correction
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
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| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |



