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HXY MOSFET HC1D20120G product image
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HXY MOSFET HC1D20120GRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HC1D20120G
LCSC Part #
C41428785
Packaging
TO-263-2L
Customer #
Key Attributes
DIODE SIC 1.2kV 54A TO-263-2L
Datasheetpdf iconHXY MOSFET HC1D20120G
In-Stock: 32
32 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 6.2636$ 5.5120$ 5.51
10+$ 5.3809$ 4.7352$ 47.35
30+$ 4.8451$ 4.2637$ 127.91
100+$ 4.394$ 3.8668$ 386.68
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerHXY MOSFET
PackagingTO-263-2L
Diode Configuration1 Independent
Operating Junction Temperature Range-55℃~+175℃
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.4V@20A
Reverse Leakage Current (Ir)200uA@1200V
Non-Repetitive Peak Forward Surge Current160A
Current - Rectified54A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Features

AI Translation
  • Low conduction loss due to low VF
  • Ultra-low switching loss via minimal QC
  • High robustness due to superior surge current capability
  • Industry-standard quality and reliability

Applications

AI Translation
  • Uninterruptible power supplies
  • Power inverters
  • High-performance switching power supplies
  • Power factor correction