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JSMSEMI MJD45H11T4GRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
MJD45H11T4G
LCSC Part #
C41421809
Packaging
TO-252
Customer #
Key Attributes
TRANS PNP 80V 8A TO-252
Datasheetpdf iconJSMSEMI MJD45H11T4G
In-Stock: 4,210
4,210 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2625$ 1.31
50+$ 0.2052$ 10.26
150+$ 0.1806$ 27.09
500+$ 0.15$ 75.00
2,500+$ 0.1454$ 363.50
5,000+$ 0.1373$ 686.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerJSMSEMI
PackagingTO-252
Current - Collector Cutoff10uA
Transition frequency(fT)40MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation50W
Number1 PNP
typePNP
Current - Collector(Ic)8A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

Low collector-emitter saturation voltage, fast switching speed, complementary types available, minimal batch-to-batch variation ensures stable and reliable device performance

Features

AI Translation
  • Low collector-emitter saturation voltage
  • Fast switching speed
  • Complementary to MJD44H11 type
  • Minimal batch-to-batch variation for consistent and reliable device performance

Applications

AI Translation
  • Designed for general-purpose power amplification and switching, suitable for output or driver stages in applications such as switching regulators, converters, and power amplifiers