JSMSEMI IRLR2905TRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRLR2905TRPBF-JSM |
| LCSC Part # | C41421802 |
| Packaging | TO-252AA |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 50A TO-252AA |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252AA | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 89W | |
| RDS(on) | 17mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDs = 60V, In = 50A, RDs(on) < 17mΩ @Vgs = 10V
- Low gate charge.
- Green device available.
- Advanced high cell density trench technology for ultra low RDS(on).
- Excellent package for good heat dissipation.
Applications
AI Translation
- Automotive applications
- Hard-switching and high-frequency circuits
- Uninterruptible power supplies
In-Stock: 1,135
1,135 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2422 | $ 1.21 |
| 50+ | $ 0.1902 | $ 9.51 |
| 150+ | $ 0.1679 | $ 25.19 |
| 500+ | $ 0.1401 | $ 70.05 |
| 2,500+ | $ 0.1277 | $ 319.25 |
| 5,000+ | $ 0.1203 | $ 601.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252AA | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 89W | |
| RDS(on) | 17mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDs = 60V, In = 50A, RDs(on) < 17mΩ @Vgs = 10V
- Low gate charge.
- Green device available.
- Advanced high cell density trench technology for ultra low RDS(on).
- Excellent package for good heat dissipation.
Applications
AI Translation
- Automotive applications
- Hard-switching and high-frequency circuits
- Uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



