JSMSEMI DRV8300DRGER-JSM

The DRV8300D is a three-phase high-voltage power MOSFET and IGBT gate driver capable of simultaneously driving the gates of both high-side and low-side power transistors. The floating channel drive design supports bus voltages up to 250V. The DRV8300D outputs deliver high drive capability with source/sink currents up to 1.2A/1.5A. The DRV8300D operates over a wide supply voltage range, and both high-side and low-side gate drive voltages can be optimized for maximum drive efficiency. Internal shoot-through protection and dead-time circuitry prevent simultaneous conduction of both transistors, further reducing switching losses. The DRV8300D's UVLO feature ensures both driver outputs are driven low when the supply voltage is insufficient. The DRV8300D integrates a bootstrap diode to minimize external circuitry. The DRV8300DPWR is available in a TSSOP20 package, and the DRV8300DRGER is available in a QFN24 package, both operating over a temperature range of -40°C to 125°C.

• Floating channel for bootstrap operation
• Maximum operating voltage up to 250V
• Gate drive voltage 5V~20V
• Compatible with 3.3/5V input logic
• dVs/dt immunity up to ±50V/ns
• Vs negative bias capability down to -9V
• Input/output in-phase
• Propagation delay
  • Ton/Toff = 150ns/150ns
  • High/low side delay matched
• Cross-conduction prevention
  • Dead time: 200ns
• High and low side UVLO
  • UVLO positive threshold 4.5V
  • UVLO negative threshold 4.3V
• Output source/sink current capability: 1.2A/1.5A
• Wide temperature range -40~125°C
• Integrated bootstrap diode
• RoHS compliant
• Available in TSSOP20 and QFN24 packages

• Power tools
• Motor control
• Two-wheelers
• Air conditioners/washing machines
• General-purpose inverters
• Micro-inverter drives