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OSEN IRFP90N20DPBFRoHS

Manufacturer
OSENAsian Brands
MPN
IRFP90N20DPBF
LCSC Part #
C41416573
Packaging
TO-247S
Customer #
Key Attributes
MOSFET N-CH 200V 90A TO-247S
Datasheetpdf iconOSEN IRFP90N20DPBF
In-Stock: 145
145 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.8111$ 1.81
10+$ 1.5562$ 15.56
30+$ 1.3963$ 41.89
90+$ 1.2333$ 111.00
510+$ 1.1589$ 591.04
990+$ 1.1272$ 1115.93
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerOSEN
PackagingTO-247S
Drain to Source Voltage200V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)90A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation480W
RDS(on)18mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)440pF
Number1 N-channel
Input Capacitance(Ciss)5.8nF
Gate Charge(Qg)410nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Fast switching speed
  • High input impedance and low-level drive
  • Avalanche energy tested
  • Improved dv/dt capability, high durability

Applications

AI Translation
  • High-efficiency switching power supplies
  • Power factor correction
  • Electronic ballasts