DOINGTER IRF9328
| Manufacturer | DOINGTERAsian Brands |
| MPN | IRF9328 |
| LCSC Part # | C41416036 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 12A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.79nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-30V, ID=-12A, RDS(ON)<14mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
In-Stock: 2,615
2,615 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0854 | $ 0.43 |
| 50+ | $ 0.0675 | $ 3.38 |
| 150+ | $ 0.0586 | $ 8.79 |
| 500+ | $ 0.0519 | $ 25.95 |
| 3,000+ | $ 0.0465 | $ 139.50 |
| 6,000+ | $ 0.0438 | $ 262.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.79nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=-30V, ID=-12A, RDS(ON)<14mΩ@VGS=-10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



