WXNSIC NSG2065Q

The NSG2065Q is a three- phase high- voltage power MOSFET and IGBT gate driver. Its floating channel drive design supports bus voltages of up to 250V. The NSG2065Q output provides significant drive capability, with output source/sink currents reaching 1.2A/1.5A. The NSG2065Q features a wide operating voltage range, and both high- side and low- side gate drive voltages can be optimized for optimal driving efficiency. Internal shoot- through protection and dead- time circuitry prevent simultaneous conduction of both transistors, further reducing switching losses. The NSG2065Q's under voltage lockout (UVLO) function ensures that both driver outputs remain low when the supply voltage is insufficient. Furthermore, the NSG2065Q integrates a bootstrap diode, which helps to optimize the external circuitry around the chip.

• Floating channel designed for bootstrap operation
• Fully operational to +250V
• 3.3V, 5V input logic compatible
• dV/dt noise Immunity ±50V/nsec
• Allowable negative Vs capability: -9V
• Gate drive supply range from 5V to 20V
• Non-inverting logic
• Undervoltage lockout for both channels
  • UVLO forward 4.5V
  • UVLO reverse 4.3V
• Propagation delay
  • Ton/Toff = 150ns/150ns
• Cross-conduction prevention logic
  • Deadtime: 200ns
• Wide operating temperature range -40°C ~ 125°C
• Typically output Source/Sink current capability: 1.2A/1.5A
• RoSH compatible
• QFN24

• Motor Control