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WXNSIC NSG2065 product image
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WXNSIC NSG2065RoHS

Manufacturer
WXNSICAsian Brands
MPN
NSG2065
LCSC Part #
C41414477
Packaging
TSSOP-20
Customer #
Key Attributes
Three-phase gate driver IC with integrated bootstrap
Datasheetpdf iconWXNSIC NSG2065
In-Stock: 2,089
2,089 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2897$ 0.2753$ 0.28
10+$ 0.2533$ 0.2407$ 2.41
30+$ 0.2374$ 0.2256$ 6.77
100+$ 0.2185$ 0.2076$ 20.76
500+$ 0.209$ 0.1986$ 99.30
1,000+$ 0.2042$ 0.1940$ 194.00
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerWXNSIC
PackagingTSSOP-20
Input Logic Level - Low800mV
Low Level Delay Time150ns
High Level Delay Time150ns
Quiescent Current-
Input Logic Level - High2.5V
Voltage - Supply5V~20V
Operating Temperature-40℃~+125℃
Driven ConfigurationThree Phase;High Side;Low Side
Current - Output Low(IOL)1.5A
Rise Time40ns
Fall Time15ns
FeaturesUnder Voltage Protection;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)1.2A
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The NSG2065 is a three-phase high-voltage power MOSFET and IGBT gate driver capable of simultaneously driving the gates of both high-side and low-side power transistors. The floating channel drive design supports bus voltages up to 250V. The NSG2065 output delivers strong drive capability, with source/sink output currents up to 1.2A/1.5A. The NSG2065 operates over a wide supply voltage range, with independently optimizable high-side and low-side gate drive voltages for maximum drive efficiency. Internal shoot-through protection and dead-time circuitry prevent simultaneous conduction of both transistors, further reducing switching losses. The UVLO function of the NSG2065 ensures both driver outputs are held low when the supply voltage is insufficient. The NSG2065 integrates a bootstrap diode to minimize external peripheral components.

Features

AI Translation
  • Floating channel supply voltage up to 250V for bootstrap operation
  • Gate drive voltage 5V~20V, compatible with 3.3/5V input logic
  • dVₛ/dt immunity up to ±50V/ns
  • Vs negative bias capability down to -9V
  • Input/output in-phase
  • Turn-on/turn-off propagation delay: Ton/Toff = 150ns/150ns
  • High and low side delay matched
  • Cross-conduction prevention, dead time: 200ns
  • High and low side UVLO
  • UVLO positive threshold 4.5V
  • UVLO negative threshold 4.3V
  • Output source/sink current capability: 1.2A/1.5A
  • Wide temperature range -40~125°C
  • Integrated bootstrap diode
  • RoHS compliant
  • TSSOP20 package

Applications

AI Translation
  • Motor Control
  • Air Conditioner/Washing Machine
  • General-Purpose Inverter
  • Micro Inverter Drive