WXNSIC G2021Q

G2021Q is a family of high-voltage, high-speed power MOSFET high- and low-side gate driver ICs, featuring independent high-side and low-side referenced output channels. A high-voltage compatible process enables monolithic integration of both high- and low-side gate drive circuits. Logic inputs are compatible with CMOS or LSTTL logic output levels as low as 3.3V. The outputs provide high-current pulse capability with shoot-through protection deadtime logic. The floating channel is suitable for driving a high-side N-channel power MOSFET, with a maximum floating supply offset voltage up to 250V; this floating channel requires an external bootstrap circuit. In addition, both the high-side and low-side of the G2021Q incorporate undervoltage lockout (UVLO) protection. Available in a DFN8 package, operating over a temperature range of -40°C to 125°C.

• Floating channel maximum voltage up to +250V (bootstrap operation)
• Compatible with 3.3V, 5V, and 15V input logic
• dVs/dt immunity up to ±50V/ns
• Vs negative bias capability down to -9V
• Gate drive voltage range: 6V to 20V
• Integrated UVLO:
  • VCC UVLO positive threshold: 5.5V
  • VCC UVLO negative threshold: 5V
  • VBS UVLO threshold: 3.6V
• Cross-conduction prevention dead-time logic, dead time: 200ns
• Propagation delay characteristics:
  • Turn-on/turn-off propagation delay Ton/Toff = 150ns/140ns
  • Delay matching time: 50ns
• Wide temperature range: -40°C to 125°C
• Output stage source/sink current capability: 1.2A/1.5A
• RoHS compliant
• DFN8 package

• Motor Control
• Air Conditioner/Washing Machine
• General-Purpose Inverter
• Micro Inverter Drive