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GOFORD G06NP06DS2 product image
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GOFORD G06NP06DS2RoHS

Manufacturer
GOFORDAsian Brands
MPN
G06NP06DS2
LCSC Part #
C41413508
Packaging
SOP-8Dual
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 60V 6A SOP-8Dual
Datasheetpdf iconGOFORD G06NP06DS2
In-Stock: 90
90 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 5Multiple: 5Sales Unit: Piece
QtyUnit PriceTotal Amount
5+$ 0.2608$ 1.30
50+$ 0.2048$ 10.24
150+$ 0.1808$ 27.12
500+$ 0.1509$ 75.45
2,500+$ 0.1375$ 343.75
4,000+$ 0.1295$ 518.00
Standard Packaging4000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerGOFORD
PackagingSOP-8Dual
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)31pF;71pF
Current - Continuous Drain(Id)3A;6A
RDS(on)63mΩ@10V;60mΩ@10V
Pd - Power Dissipation1.7W;2.8W
Gate Threshold Voltage (Vgs(th))900mV;1.7V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)25pF;65pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)454pF;1.476nF
Gate Charge(Qg)6nC;29nC
Vgs±20V
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Introduction

AI Translation

G06NP06DS2 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • NMOS
  • VDS 60V
  • ID (VGS = 10 V) 3A
  • RDS(ON) (VGS = 10 V) < 80 mΩ
  • RDS(ON) (VGS = 4.5 V) < 85 mΩ
  • 100% avalanche tested
  • RoHS compliant
  • PMOS
  • VDS -60V
  • ID (VGS = -10 V) -6A
  • RDS(ON) (VGS = -10 V) < 75 mΩ
  • RDS(ON) (VGS = -4.5V) < 92 mΩ
  • 100% avalanche tested
  • RoHS compliant

Applications

AI Translation
  • Power switch
  • DC/DC converter