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DOINGTER DO2301E-QRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DO2301E-Q
LCSC Part #
C41384537
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 2A SOT-23
Datasheetpdf iconDOINGTER DO2301E-Q
In-Stock: 365,500
365,500 In stock, ships now
Minimum: 50Multiple: 50Sales Unit: Piece
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QtyUnit PriceTotal Amount
50+$ 0.0133$ 0.67
500+$ 0.0107$ 5.35
3,000+$ 0.0091$ 27.30
6,000+$ 0.0082$ 49.20
24,000+$ 0.0075$ 180.00
51,000+$ 0.007$ 357.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation800mW
RDS(on)125mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)24pF
Number1 P-Channel
Input Capacitance(Ciss)150pF
Gate Charge(Qg)2.1nC@4.5V
TypeP-Channel
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Introduction

AI Translation

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS=-20V, ID=-2A, RDS(ON)<125mΩ@VGS=-4.5V
  • Low gate charge.
  • Green device available.
  • Advanced high cell denity trench technology for ultra RDS(ON).
  • Excellent package for good heat dissipation.