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DOINGTER DOP20N06
| Manufacturer | DOINGTERAsian Brands |
| MPN | DOP20N06 |
| LCSC Part # | C41384533 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 20A TO-220 |
| Datasheet |  DOINGTER DOP20N06 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 52.1W | |
| RDS(on) | 35mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.027nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 52.1W | |
| RDS(on) | 35mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.027nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60 V, Drain Current (ID) = 20 A, RDS(ON) < 35 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
In-Stock: 4,510
4,510 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2394 | $ 1.20 |
| 50+ | $ 0.187 | $ 9.35 |
| 150+ | $ 0.1666 | $ 24.99 |
| 500+ | $ 0.1411 | $ 70.55 |
| 2,500+ | $ 0.1298 | $ 324.50 |
| 5,000+ | $ 0.123 | $ 615.00 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 52.1W | |
| RDS(on) | 35mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.027nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 52.1W | |
| RDS(on) | 35mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.027nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60 V, Drain Current (ID) = 20 A, RDS(ON) < 35 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |