LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
DOINGTER DON130N06 product image
  • DON130N06 thumbnail 1
  • DON130N06 thumbnail 2
  • DON130N06 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

DOINGTER DON130N06RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DON130N06
LCSC Part #
C41384267
Packaging
DFN5x6-8
Customer #
Key Attributes
MOSFET N-CH 60V 130A DFN5x6-8
Datasheetpdf iconDOINGTER DON130N06
Not available now
Minimum: 1Multiple: 1Sales Unit: Piece

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN5x6-8
Drain to Source Voltage60V
Output Capacitance(Coss)1.666nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation140W
RDS(on)4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)77.7pF
Number1 N-channel
Input Capacitance(Ciss)5.377nF
Gate Charge(Qg)66.1nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 60V, ID = 130A, RDS(ON) < 3mΩ @ VGS = 10V
  • Low gate charge.
  • Green device available.
  • Advanced high cell denity trench technology for ultra RDS(ON).
  • Excellent package for good heat dissipation.