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DOINGTER DOZ15N06RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOZ15N06
LCSC Part #
C41384261
Packaging
DFN3x3-8
Customer #
Key Attributes
MOSFET N-CH 60V 15A DFN3x3-8
Datasheetpdf iconDOINGTER DOZ15N06
In-Stock: 1,170
1,170 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0726$ 0.73
100+$ 0.0571$ 5.71
300+$ 0.0494$ 14.82
1,000+$ 0.0436$ 43.60
5,000+$ 0.038$ 190.00
10,000+$ 0.0357$ 357.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN3x3-8
Drain to Source Voltage60V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation26W
RDS(on)36mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45.3pF
Number1 N-channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)20.3nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 60 V, Drain Current (ID) = 15 A, On-State Resistance (RDS(ON)) < 36 mΩ at Gate-Source Voltage (VGS) = 10 V
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance