R+O BC847BS
| Manufacturer | R+OAsian Brands |
| MPN | BC847BS |
| LCSC Part # | C41375126 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | TRANS NPN 45V 0.1A SOT-363 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 800 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 100mA | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| Emitter-Base Voltage VEBO | 6V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 800 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 100mA | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Complementary to BC856BS THRU BC858BS
- Power dissipation of 200 mW
- High stability and high reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
In-Stock: 29,040
29,040 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0284 | $ 0.57 |
| 200+ | $ 0.022 | $ 4.40 |
| 600+ | $ 0.0184 | $ 11.04 |
| 2,000+ | $ 0.0163 | $ 32.60 |
| 10,000+ | $ 0.0144 | $ 144.00 |
| 20,000+ | $ 0.0134 | $ 268.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 800 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 100mA | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| Emitter-Base Voltage VEBO | 6V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 800 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 100mA | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Complementary to BC856BS THRU BC858BS
- Power dissipation of 200 mW
- High stability and high reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
C41375126 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



