Rayson RS2G32LV4D4BDT-53BT

Manufacturer	RaysonAsian Brands
MPN	RS2G32LV4D4BDT-53BT
LCSC Part #	C41368084
Packaging	TFBGA-200(10x14.5)
Customer #
Key Attributes	Automotive LPDDR4/LPDDR4x SDRAM
Datasheet	Rayson RS2G32LV4D4BDT-53BT

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	Rayson
Packaging	TFBGA-200(10x14.5)
Refresh Current	900uA
Voltage - Supply	570mV~650mV
Memory Size	64Gbit
Operating temperature	-25℃~+85℃
Clock Frequency	1.866GHz
Features	Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function
Memory Format	LPDDR4X SDRAM
Current - Supply	-

AI Translation

Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal – VDDQ = 1.06–1.17V; 1.10V nominal or low VDDQ = 0.57–0.65V; 0.60V nominal
Frequency range – 1866–10 MHz (data rate range: 3733–20 Mb/s per pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination
Single-ended CK and DQS support
Improved ·RFCab/ᵗRFCpb = 280ns/140ns
AEC-Q100

Not available now

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	Rayson
Packaging	TFBGA-200(10x14.5)
Refresh Current	900uA
Voltage - Supply	570mV~650mV
Memory Size	64Gbit
Operating temperature	-25℃~+85℃
Clock Frequency	1.866GHz
Features	Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function
Memory Format	LPDDR4X SDRAM
Current - Supply	-

AI Translation

Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal – VDDQ = 1.06–1.17V; 1.10V nominal or low VDDQ = 0.57–0.65V; 0.60V nominal
Frequency range – 1866–10 MHz (data rate range: 3733–20 Mb/s per pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination
Single-ended CK and DQS support
Improved ·RFCab/ᵗRFCpb = 280ns/140ns
AEC-Q100