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ElecSuper IRLR7843TRPBF-ES product image
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ElecSuper IRLR7843TRPBF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRLR7843TRPBF-ES
LCSC Part #
C41365327
Packaging
TO-252
Customer #
Key Attributes
30V 95A 2.5V 58W 6.5mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper IRLR7843TRPBF-ES
In-Stock: 2,085
2,085 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3705$ 1.85
50+$ 0.2917$ 14.59
150+$ 0.257$ 38.55
500+$ 0.2144$ 107.20
2,500+$ 0.1955$ 488.75
5,000+$ 0.1845$ 922.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)330pF
RDS(on)6.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.68nF
Gate Charge(Qg)30nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IRLR7843TRPBF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLR7843TRPBF-ES is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 2.9 mΩ (typical), VGS = 10 V
  • RDS(ON) = 4.8 mΩ (typical), VGS = 4.5 V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and durable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion