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ElecSuper BSS123-7-F product image
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ElecSuper BSS123-7-FRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS123-7-F
LCSC Part #
C41365200
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 100V 290mA SOT-23
Datasheetpdf iconElecSuper BSS123-7-F
In-Stock: 1,050
1,050 In stock, ships now
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QtyUnit PriceTotal Amount
50+$ 0.0183$ 0.92
500+$ 0.0139$ 6.95
3,000+$ 0.0115$ 34.50
6,000+$ 0.0101$ 60.60
24,000+$ 0.0088$ 211.20
51,000+$ 0.0081$ 413.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage100V
Output Capacitance(Coss)2.8pF
Current - Continuous Drain(Id)290mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)29pF
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS123-7-F is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS123-7-F is lead-free.

Features

AI Translation
  • 100V, (RDS(ON) = 2.70 Ω \text{(typ)} @ VGS = 10 V)
  • (RDS(ON) = 2.95 Ω \text{(typ)} @ VGS = 4.5 V)
  • High-density cell design for low (RDS(on))
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion