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ElecSuper ESS8810 product image
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ElecSuper ESS8810RoHS

Manufacturer
ElecSuperAsian Brands
MPN
ESS8810
LCSC Part #
C41365198
Packaging
TSSOP8
Customer #
Key Attributes
MOSFET N-CH 20V 9.5A TSSOP8
Datasheetpdf iconElecSuper ESS8810
In-Stock: 2,760
2,760 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0746$ 0.75
100+$ 0.059$ 5.90
300+$ 0.0512$ 15.36
3,000+$ 0.0453$ 135.90
6,000+$ 0.0407$ 244.20
9,000+$ 0.0383$ 344.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTSSOP8
Drain to Source Voltage20V
Output Capacitance(Coss)165pF
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)11mΩ@4.5V;14mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)15nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

ESS8810 is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESS8810 is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 11 mΩ (typical), VGS = 4.5 V
  • RDS(ON) = 14 mΩ (typical), VGS = 2.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion