AGMSEMI AGM303MNA
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM303MNA |
| LCSC Part # | C41349459 |
| Packaging | PDFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 110A PDFN5x6-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 380pF | |
| Current - Continuous Drain(Id) | 110A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 70W | |
| RDS(on) | 5.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 58nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AGM303MNA combines advanced trench MOSFE T technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application
- BLDC Motor driver
In-Stock: 2,185
2,185 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3783 | $ 1.89 |
| 50+ | $ 0.2978 | $ 14.89 |
| 150+ | $ 0.2624 | $ 39.36 |
| 500+ | $ 0.2189 | $ 109.45 |
| 3,000+ | $ 0.1996 | $ 598.80 |
| 6,000+ | $ 0.1884 | $ 1130.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 380pF | |
| Current - Continuous Drain(Id) | 110A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 70W | |
| RDS(on) | 5.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 58nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AGM303MNA combines advanced trench MOSFE T technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application
- BLDC Motor driver
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



