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ST STP4NK80ZRoHS

Manufacturer
ST
MPN
STP4NK80Z
LCSC Part #
C411401
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 800V 3A TO-220
Datasheetpdf iconST STP4NK80Z
In-Stock: 466
466 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1784$ 1.18
10+$ 0.9798$ 9.80
50+$ 0.8692$ 43.46
100+$ 0.7455$ 74.55
500+$ 0.6918$ 345.90
1,000+$ 0.6657$ 665.70
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage800V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation80W
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)575pF
Gate Charge(Qg)22.5nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications

AI Translation
  • Switching application