ST STF6N95K5
| Manufacturer | |
| MPN | STF6N95K5 |
| LCSC Part # | C411400 |
| Packaging | TO-220FPAB-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 950V 9A TO-220FPAB-3 |
| Datasheet | ST STF6N95K5 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 9A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 1.25Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 950V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 9A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 1.25Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
AI Translation
- Industry’s lowest RDS(on) * area Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested Zener-protected
Applications
AI Translation
- Switching applications
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 9A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 1.25Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 450pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 950V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 9A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 1.25Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
AI Translation
- Industry’s lowest RDS(on) * area Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested Zener-protected
Applications
AI Translation
- Switching applications
C411400 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



