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ST STD4NK60ZT4RoHS

Manufacturer
ST
MPN
STD4NK60ZT4
LCSC Part #
C411399
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 600V 4A DPAK
Datasheetpdf iconST STD4NK60ZT4
In-Stock: 1,995
1,995 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.4177$ 2.09
50+$ 0.3238$ 16.19
150+$ 0.2836$ 42.54
500+$ 0.2333$ 116.65
2,500+$ 0.211$ 527.50
5,000+$ 0.1976$ 988.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage600V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
Gate Charge(Qg)26nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected

Applications

AI Translation
  • Switching applications