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ST STD3NK80ZT4RoHS

Manufacturer
ST
MPN
STD3NK80ZT4
LCSC Part #
C411398
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 800V 2.5A DPAK
Datasheetpdf iconST STD3NK80ZT4
In-Stock: 207
207 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6193$ 0.62
10+$ 0.5042$ 5.04
30+$ 0.4475$ 13.43
100+$ 0.3907$ 39.07
500+$ 0.3567$ 178.35
1,000+$ 0.3389$ 338.90
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage800V
Output Capacitance(Coss)57pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)485pF
Gate Charge(Qg)19nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including the revolutionary MDmesh products.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected

Applications

AI Translation
  • Switching applications