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onsemi FDP52N20RoHS

Manufacturer
onsemi
MPN
FDP52N20
LCSC Part #
C410937
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 200V 52A TO-220
Datasheetpdf icononsemi FDP52N20
In-Stock: 500
500 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.2354$ 2.24
10+$ 1.9261$ 19.26
30+$ 1.734$ 52.02
100+$ 1.2162$ 121.62
500+$ 1.1267$ 563.35
1,000+$ 1.0876$ 1087.60
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-220
Drain to Source Voltage200V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation357W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)49mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
Gate Charge(Qg)63nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Features

AI Translation
  • RDS(on) = 0.041Ω (Typ.) @ VGS = 10V, ID = 26A
  • Low gate charge (Typ. 49nC)
  • Low Crss (Typ. 66pF)
  • Fast switching
  • 100% avalanche tested
  • Improve dv/dt capability
  • RoHS compliant

Applications

AI Translation
  • Power management for portable and battery-powered products, such as: computers, printers, PCMCIA cards, mobile phones, and cordless phones