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UMW NDC7002N(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
NDC7002N(UMW)
LCSC Part #
C404322
Packaging
SOT-23-6
Customer #
Key Attributes
MOSFET N-CH ARR 50V 510mA SOT-23-6
Datasheetpdf iconUMW NDC7002N(UMW)
In-Stock: 61,740
61,740 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1182$ 0.59
50+$ 0.0928$ 4.64
150+$ 0.08$ 12.00
500+$ 0.0705$ 35.25
3,000+$ 0.0593$ 177.90
6,000+$ 0.0555$ 333.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerUMW
PackagingSOT-23-6
Current - Continuous Drain(Id)510mA
RDS(on)1Ω@10V
Pd - Power Dissipation960mW
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage50V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)5pF
Number2 N-Channel
Input Capacitance(Ciss)20pF
Gate Charge(Qg)1nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13pF
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Introduction

AI Translation

These dual N-channel enhancement-mode power MOSFETs are manufactured using Fairchild's proprietary high cell density DMOS technology. This high-density process is designed to minimize on-resistance, delivering robust, reliable performance and fast switching capability.

Features

AI Translation
  • VDS(V) = 50V
  • ID = 0.51A
  • RDS(ON) = 1Ω (VGS = 10V)
  • High-density cell design for low RDS(ON)
  • High saturation current
  • Proprietary SOT23-6 package with copper lead frame for superior thermal and electrical performance