MXIC MX35LF1GE4AB-Z4I
| Manufacturer | |
| MPN | MX35LF1GE4AB-Z4I |
| LCSC Part # | C402160 |
| Packaging | WSON-8-EP(6x8) |
| Customer # | |
| Key Attributes | Serial NAND Flash Memory |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | MXIC | |
| Packaging | WSON-8-EP(6x8) | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Operating temperature | -40℃~+85℃ | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 104MHz | |
| Features | Read buffer function;Write enable latch;Software reset function;ECC error correction function;Software write protection function;Hardware write protection function;OTP region write protection and lock function;Bad block management function | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 600us | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 480 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The MX35LFxGE4AB is a 1Gb/2Gb SLC NAND Flash memory device with Serial interface. The memory array of this device adopted the same cell architecture as the parallel NAND, however implementing the industry standard serial interface. An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.
Features
AI Translation
- 1Gb/2Gb SLC NAND Flash - Bus: x4 - Page size: (2048 + 64) byte - Block size: (128K + 4K) byte
- Fast Read Access - Supports Random data read out by x1 x2 & x4 modes, (1-1-1,1-1-2, 1-1-4)
- Latency of array to register: 25us
- Frequency: 104MHz
- Page Program Operation - Page program time: 300us (typ)
- Block Erase Operation - Block erase time: 1ms (typ.)
- Single Voltage Operation: - VCC: 2.7 to 3.6V
- BP bits for block group protection
- Low Power Dissipation - Max 30mA Active current (Read/Program/Erase)
- Sleep Mode - 50uA (Max) standby current
- High Reliability - Program / Erase Endurance: Typical 100K cycles (with internal 4-bit ECC per (512+16) Byte - Data Retention: 10 years
- Wide Temperature Operating Range -40℃ to +85℃
- Package: 1) 8-WSON (8x6mm) for 1Gb 2)16-SOP (300mil) for 2Gb
- All packaged devices are RoHS Compliant and Halogen-free.
In-Stock: 13,010
13,010 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 6.7889 | $ 67.89 |
| 100+ | $ 5.8859 | $ 588.59 |
| 480+ | $ 5.3353 | $ 2560.94 |
| 960+ | $ 4.8724 | $ 4677.50 |
Standard Packaging480/Full Tray | ||
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



