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MXIC MX35LF1GE4AB-Z4I product image
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MXIC MX35LF1GE4AB-Z4IRoHS

Manufacturer
MPN
MX35LF1GE4AB-Z4I
LCSC Part #
C402160
Packaging
WSON-8-EP(6x8)
Customer #
Key Attributes
Serial NAND Flash Memory
Datasheetpdf iconMXIC MX35LF1GE4AB-Z4I

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerMXIC
PackagingWSON-8-EP(6x8)
Memory Size1Gbit
Voltage - Supply2.7V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency104MHz
FeaturesRead buffer function;Write enable latch;Software reset function;ECC error correction function;Software write protection function;Hardware write protection function;OTP region write protection and lock function;Bad block management function
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)1ms
Write Cycle Time(tWC)-
Page Programming Time (Tpp)600us
Standby Supply Current50uA
InterfaceSPI

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging480
Sales UnitPiece

Introduction

AI Translation

The MX35LFxGE4AB is a 1Gb/2Gb SLC NAND Flash memory device with Serial interface. The memory array of this device adopted the same cell architecture as the parallel NAND, however implementing the industry standard serial interface. An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.

Features

AI Translation
  • 1Gb/2Gb SLC NAND Flash - Bus: x4 - Page size: (2048 + 64) byte - Block size: (128K + 4K) byte
  • Fast Read Access - Supports Random data read out by x1 x2 & x4 modes, (1-1-1,1-1-2, 1-1-4)
  • Latency of array to register: 25us
  • Frequency: 104MHz
  • Page Program Operation - Page program time: 300us (typ)
  • Block Erase Operation - Block erase time: 1ms (typ.)
  • Single Voltage Operation: - VCC: 2.7 to 3.6V
  • BP bits for block group protection
  • Low Power Dissipation - Max 30mA Active current (Read/Program/Erase)
  • Sleep Mode - 50uA (Max) standby current
  • High Reliability - Program / Erase Endurance: Typical 100K cycles (with internal 4-bit ECC per (512+16) Byte - Data Retention: 10 years
  • Wide Temperature Operating Range -40℃ to +85℃
  • Package: 1) 8-WSON (8x6mm) for 1Gb 2)16-SOP (300mil) for 2Gb
  • All packaged devices are RoHS Compliant and Halogen-free.
In-Stock: 13,010
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QtyUnit PriceTotal Amount
10+$ 6.7889$ 67.89
100+$ 5.8859$ 588.59
480+$ 5.3353$ 2560.94
960+$ 4.8724$ 4677.50
Standard Packaging480/Full Tray
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