UNI-SEMIC U3115S
| Manufacturer | UNI-SEMICAsian Brands |
| MPN | U3115S |
| LCSC Part # | C400130 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | Half-bridge of power MOSFET/IGBT Driver |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | UNI-SEMIC | |
| Packaging | SOP-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | 450ns | |
| High Level Delay Time | 190ns | |
| Quiescent Current | 300uA | |
| Input Logic Level - High | - | |
| Voltage - Supply | 9V~20V | |
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 1.2A | |
| Rise Time | 600ns | |
| Fall Time | 190ns | |
| Features | Under Voltage Protection;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode | |
| Current - Output High(IOH) | 1.5A | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
U3115S(D)/U3116S(D) is a high-voltage half-bridge gate driver IC designed to drive high-voltage, high-speed power MOSFETs and IGBTs. The device provides independent high-side and low-side referenced output channels. Its logic input levels are compatible with CMOS or LSTTL logic output levels as low as 3.3V. The output stage features high-current pulse capability and integrates shoot-through prevention and dead-time functions to effectively prevent power transistor shoot-through and protect power devices. The floating channel can be used to drive high-side N-channel power MOSFETs and IGBTs, with a maximum floating channel operating voltage of +300V.
Features
- Integrated bootstrap diode
- High-side floating bootstrap design, maximum operating voltage up to +300V
- Negative transient voltage withstand capability
- Gate drive voltage range from 9V to 20V
- VCC/VBS undervoltage lockout protection
- Compatible with 3.3V and 5V input logic
- Built-in shoot-through prevention and dead-time
- Optimized propagation delay characteristics
Applications
- Home appliances
- Industrial applications and drives
- Motor drives
- DC-AC converters
- HVAC
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2227 | $ 1.11 |
| 50+ | $ 0.171 | $ 8.55 |
| 150+ | $ 0.1489 | $ 22.34 |
| 500+ | $ 0.1186 | $ 59.30 |
| 2,500+ | $ 0.1063 | $ 265.75 |
| 4,000+ | $ 0.0989 | $ 395.60 |
Standard Packaging4000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | UNI-SEMIC | |
| Packaging | SOP-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | 450ns | |
| High Level Delay Time | 190ns | |
| Quiescent Current | 300uA | |
| Input Logic Level - High | - | |
| Voltage - Supply | 9V~20V | |
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 1.2A | |
| Rise Time | 600ns | |
| Fall Time | 190ns | |
| Features | Under Voltage Protection;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode | |
| Current - Output High(IOH) | 1.5A | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
U3115S(D)/U3116S(D) is a high-voltage half-bridge gate driver IC designed to drive high-voltage, high-speed power MOSFETs and IGBTs. The device provides independent high-side and low-side referenced output channels. Its logic input levels are compatible with CMOS or LSTTL logic output levels as low as 3.3V. The output stage features high-current pulse capability and integrates shoot-through prevention and dead-time functions to effectively prevent power transistor shoot-through and protect power devices. The floating channel can be used to drive high-side N-channel power MOSFETs and IGBTs, with a maximum floating channel operating voltage of +300V.
Features
- Integrated bootstrap diode
- High-side floating bootstrap design, maximum operating voltage up to +300V
- Negative transient voltage withstand capability
- Gate drive voltage range from 9V to 20V
- VCC/VBS undervoltage lockout protection
- Compatible with 3.3V and 5V input logic
- Built-in shoot-through prevention and dead-time
- Optimized propagation delay characteristics
Applications
- Home appliances
- Industrial applications and drives
- Motor drives
- DC-AC converters
- HVAC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



