LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
19% OFF
onsemi FCD380N60E product image
  • FCD380N60E thumbnail 1
  • FCD380N60E thumbnail 2
  • FCD380N60E thumbnail 3
  • Pinout
  • Footprint
Images for reference only

onsemi FCD380N60ERoHS

Manufacturer
onsemi
MPN
FCD380N60E
LCSC Part #
C398044
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 600V 10.2A TO-252(DPAK)
Datasheetpdf icononsemi FCD380N60E
In-Stock: 480
480 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.5194$ 1.2308$ 1.23
10+$ 1.27$ 1.0287$ 10.29
30+$ 1.1332$ 0.9179$ 27.54
100+$ 0.9786$ 0.7927$ 79.27
500+$ 0.911$ 0.7380$ 369.00
1,000+$ 0.8789$ 0.7120$ 712.00
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252(DPAK)
Drain to Source Voltage600V
Output Capacitance(Coss)1.26nF
Current - Continuous Drain(Id)10.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation106W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.77nF
Gate Charge(Qg)45nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.

Features

AI Translation
  • 650V at Tj = 150°C
  • Typ. RDS(on) = 320 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 34 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 97 pF)
  • 100% Avalanche Tested
  • An Integrated Gate Resistor
  • RoHS Compliant