Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 29pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| RDS(on) | 100mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
WMOS D1 is the first-generation Vertical Double-diffused Metal-Oxide-Semiconductor (VDMOS) product family, featuring significantly reduced on-resistance and ultra-low gate charge, designed for applications requiring high power density and high efficiency. It offers stable performance and is RoHS compliant.
Features
AI Translation
- Ultra-low gate charge
- Available in green/RoHS-compliant package options
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
Applications
AI Translation
- Switching power supply (SMPS)
- Charger
- DC-DC converter
In-Stock: 2,420
2,420 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.021 | $ 0.42 |
| 200+ | $ 0.0163 | $ 3.26 |
| 600+ | $ 0.0138 | $ 8.28 |
| 3,000+ | $ 0.0122 | $ 36.60 |
| 9,000+ | $ 0.0109 | $ 98.10 |
| 21,000+ | $ 0.0102 | $ 214.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 29pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| RDS(on) | 100mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
WMOS D1 is the first-generation Vertical Double-diffused Metal-Oxide-Semiconductor (VDMOS) product family, featuring significantly reduced on-resistance and ultra-low gate charge, designed for applications requiring high power density and high efficiency. It offers stable performance and is RoHS compliant.
Features
AI Translation
- Ultra-low gate charge
- Available in green/RoHS-compliant package options
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
Applications
AI Translation
- Switching power supply (SMPS)
- Charger
- DC-DC converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



