LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
HL 2310 product image
  • 2310 thumbnail 1
  • 2310 thumbnail 2
  • 2310 thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

HL 2310RoHS

Manufacturer
HLAsian Brands
MPN
2310
LCSC Part #
C39673591
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 3A SOT-23
Datasheetpdf iconHL 2310
In-Stock: 2,420
2,420 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.021$ 0.42
200+$ 0.0163$ 3.26
600+$ 0.0138$ 8.28
3,000+$ 0.0122$ 36.60
9,000+$ 0.0109$ 98.10
21,000+$ 0.0102$ 214.20
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHL
PackagingSOT-23
Output Capacitance(Coss)29pF
Pd - Power Dissipation1.5W
ConfigurationStandalone
Drain to Source Voltage60V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)350pF
Gate Charge(Qg)9nC
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

WMOS D1 is the first-generation Vertical Double-diffused Metal-Oxide-Semiconductor (VDMOS) product family, featuring significantly reduced on-resistance and ultra-low gate charge, designed for applications requiring high power density and high efficiency. It offers stable performance and is RoHS compliant.

Features

AI Translation
  • Ultra-low gate charge
  • Available in green/RoHS-compliant package options
  • Excellent Cdv/dt immunity
  • Advanced high cell density trench technology

Applications

AI Translation
  • Switching power supply (SMPS)
  • Charger
  • DC-DC converter