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TOSHIBA TK100E10N1,S1X(S product image
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TOSHIBA TK100E10N1,S1X(SRoHS

Manufacturer
TOSHIBA
MPN
TK100E10N1,S1X(S
LCSC Part #
C396029
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 100V 207A TO-220
Datasheetpdf iconTOSHIBA TK100E10N1,S1X(S
In-Stock: 1,999
1,999 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.4573$ 1.46
10+$ 1.2526$ 12.53
50+$ 1.082$ 54.10
100+$ 0.9553$ 95.53
500+$ 0.8985$ 449.25
1,000+$ 0.8741$ 874.10
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingTO-220
Drain to Source Voltage100V
Current - Continuous Drain(Id)207A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation255W
RDS(on)3.4mΩ@10V
Number1 N-channel
Gate Charge(Qg)140nC@10V
Vgs±20V
TypeN-Channel
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Features

AI Translation
  • Low drain-source on-resistance: R<sub>DS(ON)</sub> = 2.8 mΩ (typ.) (V<sub>GS</sub> = 10 V)
  • Low leakage current: I<sub>DSS</sub> = 10 μA (max.) (V<sub>DS</sub> = 100 V)
  • Enhancement mode: V<sub>th</sub> = 2.0 to 4.0 V (V<sub>DS</sub> = 10 V, I<sub>D</sub> = 1.0 mA)

Applications

AI Translation
  • Switching Voltage Regulators