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Qorvo QPD2080D
| Manufacturer | |
| MPN | QPD2080D |
| LCSC Part # | C39040237 |
| Packaging | - |
| Customer # | |
| Key Attributes | RF FETs, MOSFETs RoHS |
| Datasheet |  Qorvo QPD2080D |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | Qorvo | |
| Packaging | - | |
| Drain to Source Voltage | - | |
| Current - Continuous Drain(Id) | - | |
| Type | - | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Operating Temperature | - | |
| Pd - Power Dissipation | - | |
| Technology | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coss) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 100 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The Qorvo QPD2080D is a discrete 800-micron pHEMT operating over a frequency range of DC to 20 GHz. The device is fabricated using a mature 0.25-micron power pHEMT production process, which employs advanced technology optimized for microwave power and efficiency under high drain bias operating conditions. At the 1 dB compression point, the QPD2080D typically delivers 29.5 dBm output power, 11.5 dB gain, and 56% power-added efficiency, making it well-suited for high-efficiency applications. A protective silicon nitride overcoat provides a degree of environmental robustness and scratch protection. The device is lead-free and RoHS compliant.
Features
- Frequency: DC ~ 20 GHz
- Output Power: 29.5 dBm
- Typical Gain: 11.5 dB
- Typical Power Added Efficiency: 56%
- Noise Figure: 1 dB
- No Via Holes
- Technology: 0.25 µm GaAs pHEMT
- Die Size: 0.41 × 0.54 × 0.10 mm
Applications
- High Reliability
- Test & Measurement
- Commercial
- Broadband Wireless
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 42.5766 | $ 42.58 |
| 200+ | $ 16.9889 | $ 3397.78 |
| 500+ | $ 16.4216 | $ 8210.80 |
| 1,000+ | $ 16.1404 | $ 16140.40 |
Standard Packaging100/Full Bag | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | Qorvo | |
| Packaging | - | |
| Drain to Source Voltage | - | |
| Current - Continuous Drain(Id) | - | |
| Type | - | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Operating Temperature | - | |
| Pd - Power Dissipation | - | |
| Technology | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coss) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 100 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The Qorvo QPD2080D is a discrete 800-micron pHEMT operating over a frequency range of DC to 20 GHz. The device is fabricated using a mature 0.25-micron power pHEMT production process, which employs advanced technology optimized for microwave power and efficiency under high drain bias operating conditions. At the 1 dB compression point, the QPD2080D typically delivers 29.5 dBm output power, 11.5 dB gain, and 56% power-added efficiency, making it well-suited for high-efficiency applications. A protective silicon nitride overcoat provides a degree of environmental robustness and scratch protection. The device is lead-free and RoHS compliant.
Features
- Frequency: DC ~ 20 GHz
- Output Power: 29.5 dBm
- Typical Gain: 11.5 dB
- Typical Power Added Efficiency: 56%
- Noise Figure: 1 dB
- No Via Holes
- Technology: 0.25 µm GaAs pHEMT
- Die Size: 0.41 × 0.54 × 0.10 mm
Applications
- High Reliability
- Test & Measurement
- Commercial
- Broadband Wireless
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |