SAMSUNG K4T51163QN-BCE7

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-84
Refresh Current	8mA
Voltage - Supply	1.7V~1.9V
Memory Size	512Mbit
Operating temperature	-40℃~+95℃
Clock Frequency	533MHz
Features	Auto self-refresh;Auto precharge function;Data mask function;Dynamic on-chip termination
Memory Format	DDR2 SDRAM
Current - Supply	41mA

AI Translation

JEDEC standard, VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V
CK frequency 333MHz at 667Mb/s/pin, 400MHz at 800Mb/s/pin, 533MHz at 1066Mb/s/pin
4 banks
Posted CAS
Programmable CAS latency: 3, 4, 5, 6, 7
Programmable additive latency: 0, 1, 2, 3, 4, 5
Write latency (WL) = Read latency (RL) - 1
Burst length: 4, 8 (interleave/nibble sequential)
Programmable sequential/interleave burst mode
Differential bidirectional data strobe (single-ended data strobe optional)
Off-chip driver (OCD) impedance calibration
On-die termination
Special feature support
50Ω on-die termination
High-temperature self-refresh rate enable
Average refresh interval at commercial temperature: 7.8μs when case temperature < 85°C, 3.9μs when 85°C < case temperature ≤ 95°C
Industrial temperature support (-40 ~ 90°C)
tREFI = 7.8μs when -40°C < case temperature < 85°C
tREFI = 3.9μs when 85°C ≤ case temperature ≤ 95°C
All products are lead-free, halogen-free, and RoHS compliant

In-Stock: 44

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Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 3.6864	$ 3.69
10+	$ 3.1412	$ 31.41
30+	$ 2.8173	$ 84.52
100+	$ 2.4885	$ 248.85
500+	$ 2.3372	$ 1168.60
1,000+	$ 2.2688	$ 2268.80
Standard Packaging2000/Full Reel

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Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-84
Refresh Current	8mA
Voltage - Supply	1.7V~1.9V
Memory Size	512Mbit
Operating temperature	-40℃~+95℃
Clock Frequency	533MHz
Features	Auto self-refresh;Auto precharge function;Data mask function;Dynamic on-chip termination
Memory Format	DDR2 SDRAM
Current - Supply	41mA

AI Translation

JEDEC standard, VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V
CK frequency 333MHz at 667Mb/s/pin, 400MHz at 800Mb/s/pin, 533MHz at 1066Mb/s/pin
4 banks
Posted CAS
Programmable CAS latency: 3, 4, 5, 6, 7
Programmable additive latency: 0, 1, 2, 3, 4, 5
Write latency (WL) = Read latency (RL) - 1
Burst length: 4, 8 (interleave/nibble sequential)
Programmable sequential/interleave burst mode
Differential bidirectional data strobe (single-ended data strobe optional)
Off-chip driver (OCD) impedance calibration
On-die termination
Special feature support
50Ω on-die termination
High-temperature self-refresh rate enable
Average refresh interval at commercial temperature: 7.8μs when case temperature < 85°C, 3.9μs when 85°C < case temperature ≤ 95°C
Industrial temperature support (-40 ~ 90°C)
tREFI = 7.8μs when -40°C < case temperature < 85°C
tREFI = 3.9μs when 85°C ≤ case temperature ≤ 95°C
All products are lead-free, halogen-free, and RoHS compliant