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baocheng BCD7N65RoHS

Manufacturer
baochengAsian Brands
MPN
BCD7N65
LCSC Part #
C3874043
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 650V 7A TO-252
Datasheetpdf iconbaocheng BCD7N65
In-Stock: 6,340
6,340 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.2492$ 0.2368$ 1.18
50+$ 0.217$ 0.2062$ 10.31
150+$ 0.2032$ 0.1931$ 28.97
500+$ 0.186$ 0.1767$ 88.35
2,500+$ 0.1717$ 0.1632$ 408.00
5,000+$ 0.167$ 0.1587$ 793.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturerbaocheng
PackagingTO-252
Drain to Source Voltage650V
Output Capacitance(Coss)111pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)6.1pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.09nF
Gate Charge(Qg)20.7nC@10V
TypeN-Channel
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Introduction

AI Translation

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance, superior switching performance and high avalance energy.

Features

AI Translation
  • Low RDS(on)
  • Low gate charge (typ. Qg = 20.7nC)
  • 100% UIS tested
  • RoHS compliant

Applications

AI Translation
  • Power faction correction.
  • Switched mode power supplies.
  • LED driver.