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Infineon IRFP4332PBFRoHS

Manufacturer
MPN
IRFP4332PBF
LCSC Part #
C386341
Packaging
TO-247-3
Customer #
Key Attributes
MOSFET N-CH 250V 57A TO-247-3
Datasheetpdf iconInfineon IRFP4332PBF
In-Stock: 66
66 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.741$ 2.74
10+$ 2.3811$ 23.81
25+$ 1.8827$ 47.07
100+$ 1.6531$ 165.31
450+$ 1.5472$ 696.24
900+$ 1.5032$ 1352.88
Standard Packaging25/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-3
Drain to Source Voltage250V
Output Capacitance(Coss)530pF
Current - Continuous Drain(Id)57A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation360W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)33mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.86nF
Gate Charge(Qg)150nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Passswitch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Features

AI Translation
  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low EpuLsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low QG for Fast Response
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short Fall & Rise Times for Fast Switching
  • 175°C Operating Junction Temperature for Improved Ruggedness
  • Repetitive Avalanche Capability for Robustness and Reliability