Infineon IRFP4229PBF
| Manufacturer | |
| MPN | IRFP4229PBF |
| LCSC Part # | C386339 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 250V 44A TO-247-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 310W | |
| Configuration | - | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 44A | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.56nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | - | |
| Type | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Passswitch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
Applications
- High-speed switching applications - Analog switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5462 | $ 1.55 |
| 10+ | $ 1.3102 | $ 13.10 |
| 25+ | $ 1.18 | $ 29.50 |
| 100+ | $ 1.0335 | $ 103.35 |
| 550+ | $ 0.9684 | $ 532.62 |
| 1,100+ | $ 0.9391 | $ 1033.01 |
Standard Packaging25/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 310W | |
| Configuration | - | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 44A | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.56nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | - | |
| Type | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Passswitch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
Applications
- High-speed switching applications - Analog switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



