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Infineon IRFP2907PBFRoHS

Manufacturer
Infineon
MPN
IRFP2907PBF
LCSC Part #
C38573
Packaging
TO-247AC
Customer #
Key Attributes
MOSFET N-CH 75V 209A TO-247AC
Datasheetpdf iconInfineon IRFP2907PBF
In-Stock: 307
307 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.5816$ 2.58
10+$ 2.1654$ 21.65
25+$ 1.9053$ 47.63
100+$ 1.6387$ 163.87
400+$ 1.5184$ 607.36
800+$ 1.4647$ 1171.76
Standard Packaging25/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247AC
Drain to Source Voltage75V
Current - Continuous Drain(Id)209A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation470W
Reverse Transfer Capacitance (Crss@Vds)500pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13nF
Gate Charge(Qg)620nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Introduction

AI Translation

This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free

Applications

AI Translation
  • Telecom applications requiring soft start