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CRMICRO CS60N20A8R product image
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CRMICRO CS60N20A8RRoHS

Manufacturer
CRMICROAsian Brands
MPN
CS60N20A8R
LCSC Part #
C38402991
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 200V 60A TO-220AB
Datasheetpdf iconCRMICRO CS60N20A8R
In-Stock: 142
142 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.2039$ 1.20
10+$ 1.0024$ 10.02
50+$ 0.9017$ 45.09
100+$ 0.8026$ 80.26
500+$ 0.7441$ 372.05
1,000+$ 0.7133$ 713.30
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerCRMICRO
PackagingTO-220AB
Drain to Source Voltage200V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)39mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.308nF
Gate Charge(Qg)56.9nC@10V
TypeN-Channel
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Introduction

AI Translation

CS60N20 A8R is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces conduction losses, improves switching performance, and enhances avalanche energy capability. This transistor is suitable for a wide range of power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220AB package, RoHS compliant.

Features

AI Translation
  • Fast switching
  • Low on-resistance (Rdson ≤ 46mΩ)
  • Low gate charge (typical: 56.9nC)
  • Low reverse transfer capacitance (typical: 46pF)
  • 100% single-pulse avalanche energy tested

Applications

AI Translation
  • Power switching circuits for adapters and chargers