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onsemi MBRS120T3G
| Manufacturer | |
| MPN | MBRS120T3G |
| LCSC Part # | C38049 |
| Packaging | SMB(DO-214AA) |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 20V SMB(DO-214AA) |
| Datasheet |  onsemi MBRS120T3G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMB(DO-214AA) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 20V | |
| Voltage - Forward(Vf@If) | 600mV@1A | |
| Reverse Leakage Current (Ir) | 1mA@20V | |
| Non-Repetitive Peak Forward Surge Current | 40A | |
| Current - Rectified | 1A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1211 | $ 0.61 |
| 50+ | $ 0.0949 | $ 4.75 |
| 150+ | $ 0.0818 | $ 12.27 |
| 500+ | $ 0.072 | $ 36.00 |
| 2,500+ | $ 0.0641 | $ 160.25 |
| 5,000+ | $ 0.0602 | $ 301.00 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMB(DO-214AA) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 20V | |
| Voltage - Forward(Vf@If) | 600mV@1A | |
| Reverse Leakage Current (Ir) | 1mA@20V | |
| Non-Repetitive Peak Forward Surge Current | 40A | |
| Current - Rectified | 1A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |