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ST STPSC10H065DRoHS

Manufacturer
ST
MPN
STPSC10H065D
LCSC Part #
C377927
Packaging
TO-220AC
Customer #
Key Attributes
DIODE SIC 650V 10A TO-220AC
Datasheetpdf iconST STPSC10H065D
In-Stock: 526
526 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.3844$ 2.38
10+$ 2.041$ 20.41
50+$ 1.8261$ 91.31
100+$ 1.6064$ 160.64
500+$ 1.5071$ 753.55
1,000+$ 1.4648$ 1464.80
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerST
PackagingTO-220AC
Diode ConfigurationStandalone
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.56V@10A
Reverse Leakage Current (Ir)9uA@650V
Current - Rectified10A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

This STPSC10H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Features

AI Translation
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins: Insulated voltage: 2500 VRMS Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK2 compliant component

Applications

AI Translation
  • Switch mode power supply
  • PFC
  • DCDC converters
  • LLC topologies
  • Boost diode