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MICROCHIP UPS115UE3/TR7 product image
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MICROCHIP UPS115UE3/TR7RoHS

Manufacturer
MICROCHIP
MPN
UPS115UE3/TR7
LCSC Part #
C3758660
Packaging
DO-216AA
Customer #
Key Attributes
DIODE SCHOTTKY 15V DO-216AA
Datasheetpdf iconMICROCHIP UPS115UE3/TR7
In-Stock: 11
11 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.4952$ 1.50
10+$ 1.2204$ 12.20
30+$ 1.0685$ 32.06
100+$ 0.8987$ 89.87
500+$ 0.8228$ 411.40
1,000+$ 0.7872$ 787.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerMICROCHIP
PackagingDO-216AA
Diode Configuration1 Independent
Operating Junction Temperature Range-55℃~+100℃
Voltage - DC Reverse (Vr) (Max)15V
Voltage - Forward(Vf@If)310mV@1A
Reverse Leakage Current (Ir)10mA@15V
Non-Repetitive Peak Forward Surge Current50A
Current - Rectified1A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These high-efficiency Schottky rectifiers are housed in Microsemi's Powermite 1 SMT package, delivering power handling capability previously available only in larger packages. They are ideal for SMD applications operating at high frequencies. Beyond their compact footprint, the Powermite package features an all-metal base that eliminates the possibility of flux entrapment during assembly, along with a unique locking tab that serves as an integrated heatsink. The innovative design makes these devices highly compatible with automated insertion equipment.

Features

AI Translation
  • Low-profile package (< 1.1mm)
  • Small footprint: 10mm²
  • Ultra-low forward voltage for higher efficiency
  • Low thermal resistance with direct heat dissipation via integrated heat spreader and metal base
  • 8mm tape and reel packaging
  • RoHS compliant

Applications

AI Translation
  • High-power SMT package
  • Guard ring structure for transient protection
  • Integrated heatsink/locking tab
  • Compatible with automatic insertion equipment
  • All-metal base eliminates flux entrapment
  • High surge capability
  • Ideal for OR-ing diode applications