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Infineon IRF7343TRPBF product image
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Infineon IRF7343TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7343TRPBF
LCSC Part #
C36656
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 55V 4.7A SO-8
Datasheetpdf iconInfineon IRF7343TRPBF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerInfineon
PackagingSO-8
Current - Continuous Drain(Id)4.7A
RDS(on)50mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage55V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)210pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)740pF
Gate Charge(Qg)36nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)190pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Features

AI Translation
  • Generation V Technology
  • Ultra Low On-Resistance
  • Dual N and P Channel MOSFET
  • Surface Mount
  • Fully Avalanche Rated
  • Lead-Free
In-Stock: 7,258
7,258 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4505$ 0.45
10+$ 0.3695$ 3.70
30+$ 0.3338$ 10.01
100+$ 0.2901$ 29.01
500+$ 0.2415$ 120.75
1,000+$ 0.2285$ 228.50
Standard Packaging4000/Full Reel
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