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DOINGTER DC010NG
| Manufacturer | DOINGTERAsian Brands |
| MPN | DC010NG |
| LCSC Part # | C36499187 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 55A TO-252 |
| Datasheet |  DOINGTER DC010NG |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 30 V, drain current (ID) = 55 A, on-resistance (RDS(ON)) < 10 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- High-quality package with excellent thermal dissipation
In-Stock: 4,330
4,330 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0842 | $ 0.42 |
| 50+ | $ 0.0665 | $ 3.33 |
| 150+ | $ 0.0576 | $ 8.64 |
| 500+ | $ 0.051 | $ 25.50 |
| 2,500+ | $ 0.0415 | $ 103.75 |
| 5,000+ | $ 0.0388 | $ 194.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 30 V, drain current (ID) = 55 A, on-resistance (RDS(ON)) < 10 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- High-quality package with excellent thermal dissipation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |