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DOINGTER DOD12N10RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOD12N10
LCSC Part #
C36499182
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 11.3A TO-252
Datasheetpdf iconDOINGTER DOD12N10
In-Stock: 7,505
7,505 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.082$ 0.41
50+$ 0.0641$ 3.21
150+$ 0.0552$ 8.28
500+$ 0.0484$ 24.20
2,500+$ 0.0419$ 104.75
5,000+$ 0.0393$ 196.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)11.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation29.9W
RDS(on)120mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)27pF
Number1 N-channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)16.8nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 100 V, Drain Current (ID) = 11.3 A, On-State Resistance (RDS(ON)) < 120 mΩ at Gate-Source Voltage (VGS) = 10 V
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell-density trench technology for ultra-low RDS(ON).
  • Thermally enhanced package.

Applications

AI Translation
  • High power density
  • Easy installation
  • Space-saving