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DOINGTER DOZ30P03RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOZ30P03
LCSC Part #
C36499166
Packaging
DFN3x3-8
Customer #
Key Attributes
MOSFET P-CH 30V 30A DFN3x3-8
Datasheetpdf iconDOINGTER DOZ30P03
In-Stock: 11,605
11,605 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.0919$ 0.46
50+$ 0.0754$ 3.77
150+$ 0.0671$ 10.07
500+$ 0.0609$ 30.45
2,500+$ 0.0525$ 131.25
5,000+$ 0.0501$ 250.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN3x3-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)144pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.229nF
Gate Charge(Qg)26.3nC@10V
TypeP-Channel
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Introduction

AI Translation

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS=-30V, ID=-30A, RDS(ON) <15mΩ@VGS=-10V
  • Low gate charge.
  • Green device available.
  • Advanced high cell denity trench technology for ultra Iow RDS(ON).

Applications

AI Translation
  • Power distribution and battery management (electronic fuses and disconnect switches) - Inrush current limiting (capacitor charging, motor surge current) - Slow switching to minimize voltage transients and EMI (electrocatalytic heaters) - Drain-source voltage clamping (inductive energy dissipation, overvoltage protection)