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MATSUKI ME55N06ARoHS

Manufacturer
MATSUKIAsian Brands
MPN
ME55N06A
LCSC Part #
C3647155
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 75V 64A TO-252
Datasheetpdf iconMATSUKI ME55N06A
In-Stock: 2,400
2,400 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3937$ 0.39
10+$ 0.3518$ 3.52
30+$ 0.3317$ 9.95
100+$ 0.31$ 31.00
500+$ 0.2976$ 148.80
1,000+$ 0.2914$ 291.40
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMATSUKI
PackagingTO-252
Drain to Source Voltage75V
Current - Continuous Drain(Id)64A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation63W
RDS(on)9.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)194pF
Number1 N-channel
Input Capacitance(Ciss)1.563nF
Gate Charge(Qg)114nC@10V
TypeN-Channel
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Introduction

AI Translation

The ME55N06A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.

Features

AI Translation
  • RDS(ON) ≤ 9.5mΩ @ VGS = 10V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability

Applications

AI Translation
  • Power Management in Note book DC/DC Converter
  • Load Switch
  • LCD Display inverter